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Newsroom Home Newsroom Archive 2005 September 29

News Release

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Epson Develops the World's First Flexible TFT SRAM

Flexible TFT-SRAM
- TOKYO, Japan, September 29, 2005 -

Seiko Epson Corporation ("Epson") today announced that it had developed the world's first*1 flexible TFT-SRAM (16 kbits). The company expects the TFT-SRAM to be adopted in the near future as a key component for small, light and flexible electronic devices.

Over the years, Epson has developed a reputation for developing compact, energy-saving electronic devices. Using this experience and technical expertise, the company has now set itself the target of developing devices that are thin, light and flexible. To achieve this aim, Epson has developed original technologies including low temperature poly-Si technology using thin film formation, and SUFTLA*2, which allows the transfer of TFT circuits from a glass substrate onto flexible substrates.

To develop the TFT-SRAM, Epson used its technologies to integrate all the circuit blocks that make up the memory into a single chip on a plastic substrate. The result is a TFT-SRAM that operates stably at high speed, and at low voltage.

The TFT-SRAM can be used as the working memory for "ACT11*3," Epson's previously announced original asynchronous 8-bit microprocessor. The company's researchers succeeded in running demo programs using the combination of TFT-SRAM and ACT11.

Epson is presently continuing its research in flexible electronic device technologies, in addition to searching for potential applications.

Features

  • Real TFT-SRAM, with one cell consisting of six transistors

  • Short access time is realized by integrating a sense amplifier onto a flexible substrate

  • TFT-SRAM can be used as the working memory for ACT11, Epson's original asynchronous 8-bit microprocessor

Specifications

Memory size 16 kbits
Supply voltage 3.0 V-6.0 V
Access time Supply voltage
3.0 V
Read 650 ns
Write 325 ns
Supply voltage
6.0 V
Read 200 ns
Write 100 ns
Feature size 3 µm
Memory cell type 6 T
Memory cell size 68 µm x 47.5 µm
Chip size 10.77 mm x 8.28 mm
Thickness 200 µm


Block diagram
Block diagram

Pin name Description
Address 0 - 10 Address input
DATA 0 - 7 DATA I/O
CS Chip select
RD_ Read instruction
WR_ Write instruction


Click here for more information about Epson technology.

*1: According to Epson research.
*2: Surface Free Technology by Laser Ablation /Annealing. SUFTLA is a trademark or registered trademark of Seiko Epson Corp.
*3: Asynchronous Core on TFT. Epson's original asynchronous 8-bit TFT microprocessor.

About Epson
Epson is a global leader in imaging products including printers, projectors and LCDs. With an innovative and creative culture, Epson is dedicated to exceeding the vision and expectations of customers worldwide with products known for their superior quality, functionality, compactness and energy efficiency.
Epson is a network of 85,647 employees in 116 companies around the world, and is proud of its ongoing contributions to the global environment and to the communities in which it is located. Led by the Japan-based Seiko Epson Corp., the Group had consolidated sales of 1479.7 billion yen in fiscal 2004.

Contact:
Seiko Epson Corp.
Public Relations and Brand Strategy
Contact us by e-mail
URL: http://www.epson.co.jp/